Toshiba

Semiconductors

CATEGORIES

Viewing 21 - 40 of 569 products
Compare selected 0/8
View as:
Price
(Price shown excludes VAT)
Description
Product Details
Toshiba 2SC3326-A(TE85L,F) NPN Transistor, 300 mA, 20 V, 3-Pin SOT-346
  • R 5.352
    Each (In a Pack of 25)
Toshiba 2SC3326-A(TE85L,F) NPN Transistor, 300 mA, 20 V, 3-Pin SOT-346
  • Transistor TypeNPN
  • Maximum DC Collector Current300 mA
  • Maximum Collector Emitter Voltage20 V
  • Package TypeSOT-346 (SC-59)
  • Mounting TypeSurface Mount
See similar products in Bipolar Transistors
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M
  • R 94.20Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
  • R 13.07
    Each (In a Pack of 10)
N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK Toshiba TK6P65W,RQ(S
  • Channel TypeN
  • Maximum Continuous Drain Current5.8 A
  • Maximum Drain Source Voltage650 V
  • Package TypeDPAK (TO-252)
  • SeriesDTMOSIV
See similar products in MOSFETs
Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P
  • R 44.718
    Each (In a Pack of 5)
Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3P
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • R 65.023
    Each (In a Tube of 50)
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • R 7.819
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current0.3 to 0.75mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
Toshiba TCR2EF33,LM(CT, LDO Regulator, 200mA, 3.3 V, ±1% 5-Pin, SOT-25
  • R 2.826
    Each (In a Pack of 100)
Toshiba TCR2EF33,LM(CT, LDO Regulator, 200mA, 3.3 V, ±1% 5-Pin, SOT-25
  • Regulator TypeLow Dropout Voltage
  • Maximum Output Current200mA
  • Output Voltage3.3 V
  • Number of Outputs1
  • Line Regulation15 mV
See similar products in Voltage Regulators
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 Toshiba TK39N60W,S1VF(S
  • R 111.49Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 Toshiba TK39N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-247
See similar products in MOSFETs
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • R 7.917
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current1.2 to 3.0mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 93.25
    Each (In a Tube of 25)
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 106.29Each
  • Also available in industry standard packaging
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • R 61.726
    Each (In a Tube of 30)
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-247
See similar products in MOSFETs
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • R 28.75
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • R 10.556
    Each (In a Tube of 50)
N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current30 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 Toshiba 2SK4017(Q)
  • R 6.642
    Each (In a Pack of 20)
N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 Toshiba 2SK4017(Q)
  • Channel TypeN
  • Maximum Continuous Drain Current5 A
  • Maximum Drain Source Voltage60 V
  • Package TypePW Mold2
  • Series2SK
See similar products in MOSFETs
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
  • R 61.672
    Each (In a Pack of 5)
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesDTMOSIV
See similar products in MOSFETs
N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-3PN Toshiba TK16J60W,S1VQ(O
  • R 65.96Each
N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-3PN Toshiba TK16J60W,S1VQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current15.8 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-3PN
See similar products in MOSFETs
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • R 85.68Each
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current40 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • R 15.602
    Each (In a Pack of 10)
  • Also available in industry standard packaging
N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current30 A
  • Maximum Drain Source Voltage60 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • R 90.475
    Each (In a Pack of 2)
  • Also available in industry standard packaging
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-247
See similar products in MOSFETs
Recently Searched
Frequently Asked Questions
Need help?
Call our Customer Services team on:
+27(0)11 6919300
Services
About RS
Hot Topics
Phone us
011 691 9300
© RS Components (SA)
P.O. Box 12182, Vorna Valley 1686, 20 Indianapolis Street, Kyalami Business Park, Kyalami, Midrand, South Africa
Payment options