Toshiba

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Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • R 63.715
    Each (In a Tube of 50)
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 Toshiba TK39N60W,S1VF(S
  • R 109.28Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-247 Toshiba TK39N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesTK
See similar products in MOSFETs
Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P
  • R 39.756
    Each (In a Pack of 5)
Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3P
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • R 7.762
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current1.2 to 3.0mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • R 2.80
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current0.3 to 0.75mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN Toshiba TK39J60W5,S1VQ(O
  • R 73.47Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN Toshiba TK39J60W5,S1VQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-3PN
  • SeriesTK
See similar products in MOSFETs
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • R 86.07Each
  • Also available in industry standard packaging
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 104.19Each
  • Also available in industry standard packaging
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • R 8.925
    Each (In a Pack of 10)
N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current43 A
  • Maximum Drain Source Voltage60 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E
  • R 64.15
    Each (In a Tube of 25)
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba TK9J90E
  • Channel TypeN
  • Maximum Continuous Drain Current9 A
  • Maximum Drain Source Voltage900 V
  • SeriesTK
  • Package TypeTO-3PN
See similar products in MOSFETs
Toshiba 5V 30mA, Schottky Diode, 2-Pin SOD-323 1SS315(TPH3,F)
  • R 4.044
    Each (In a Pack of 25)
Toshiba 5V 30mA, Schottky Diode, 2-Pin SOD-323 1SS315(TPH3,F)
  • Mounting TypeSurface Mount
  • Package TypeSOD-323
  • Maximum Continuous Forward Current30mA
  • Peak Reverse Repetitive Voltage5V
  • Diode ConfigurationSingle
See similar products in Schottky Diodes & Rectifiers
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • R 28.186
    Each (In a Pack of 5)
  • Also available in industry standard packaging
N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 Toshiba TK40E10N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • R 88.68
    Each (In a Pack of 2)
  • Also available in industry standard packaging
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 Toshiba TK72E08N1,S1X(S
  • R 26.768
    Each (In a Pack of 5)
N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 Toshiba TK72E08N1,S1X(S
  • Channel TypeN
  • Maximum Continuous Drain Current157 A
  • Maximum Drain Source Voltage80 V
  • Package TypeTO-220
  • SeriesU-MOSVIII-H
See similar products in MOSFETs
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • R 178.47Each
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage600 V
  • SeriesTK
  • Package TypeTO-247
See similar products in MOSFETs
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • R 60.509
    Each (In a Tube of 30)
N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current20 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
  • R 4.875
    Each (In a Pack of 10)
N-Channel MOSFET, 6.8 A, 650 V, 3-Pin DPAK Toshiba TK7P65W,RQ(S
  • Channel TypeN
  • Maximum Continuous Drain Current6.8 A
  • Maximum Drain Source Voltage650 V
  • SeriesDTMOSIV
  • Package TypeDPAK (TO-252)
See similar products in MOSFETs
N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 Toshiba 2SK4017(Q)
  • R 5.762
    Each (In a Pack of 20)
N-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold2 Toshiba 2SK4017(Q)
  • Channel TypeN
  • Maximum Continuous Drain Current5 A
  • Maximum Drain Source Voltage60 V
  • Series2SK
  • Package TypePW Mold2
See similar products in MOSFETs
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • R 92.02Each
Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current40 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • R 308.11Each
  • Also available in industry standard packaging
N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 Toshiba TK62N60W,S1VF(S
  • Channel TypeN
  • Maximum Continuous Drain Current62 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-247
  • SeriesTK
See similar products in MOSFETs
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