Toshiba

Semiconductors

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  • R 40.017
    Each (In a Tube of 100)
Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
  • R 55.51Each
Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
  • R 19.634
    Each (In a Pack of 5)
N-Channel MOSFET, 6 A, 600 V, 3-Pin SC-67 Toshiba TK6A60D,S5Q(J
  • Channel TypeN
  • Maximum Continuous Drain Current6 A
  • Maximum Drain Source Voltage600 V
  • Package TypeSC-67
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 47.896
    Each (In a Pack of 5)
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
  • R 45.62Each
N-Channel MOSFET, 1 A, 30 V, 3-Pin PW Mini Toshiba 2SK3074(TE12L,F)
  • Channel TypeN
  • Maximum Continuous Drain Current1 A
  • Maximum Drain Source Voltage30 V
  • Package TypePW Mini
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • R 87.03Each
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
  • R 32.578
    Each (On a Reel of 1000)
N-Channel MOSFET, 1 A, 30 V, 3-Pin PW Mini Toshiba 2SK3074(TE12L,F)
  • Channel TypeN
  • Maximum Continuous Drain Current1 A
  • Maximum Drain Source Voltage30 V
  • Package TypePW Mini
  • Mounting TypeSurface Mount
See similar products in MOSFETs
  • R 52.889
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
  • R 18.316
    Each (In a Pack of 5)
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current10 A
  • Maximum Drain Source Voltage800 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 43.996
    Each (In a Pack of 5)
Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P
  • Transistor TypePNP
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3P
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
  • R 30.058
    Each (In a Pack of 4)
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 39.799
    Each (In a Tube of 50)
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 22.478
    Each (In a Pack of 5)
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current263 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 44.96
    Each (In a Pack of 2)
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current207 A
  • Maximum Drain Source Voltage100 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 58.135
    Each (In a Pack of 2)
Toshiba TB6559FG(O,8,EL), Brushed Motor Driver IC, 30 V 2.5A 18-Pin, HSOP
  • Motor TypeBrushed DC
  • Output ConfigurationFull Bridge
  • Maximum IGBT Collector Current2.5A
  • Maximum Collector Emitter Voltage30 V
  • Mounting TypeSurface Mount
See similar products in Motor Driver ICs
  • R 28.332
    Each (In a Pack of 5)
N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 Toshiba 2SK4013,S5Q(J
  • Channel TypeN
  • Maximum Continuous Drain Current6 A
  • Maximum Drain Source Voltage800 V
  • Package TypeSC-67
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 50.00
    Each (In a Pack of 2)
Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package Type2-21F1A
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
  • R 51.77Each
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN Toshiba TK31J60W5,S1VQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current31 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-3PN
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 20.308
    Each (In a Pack of 5)
N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current9.7 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
  • R 57.54Each
N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-220SIS Toshiba TK39A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current39 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-220SIS
  • Mounting TypeThrough Hole
See similar products in MOSFETs
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