N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN Toshiba TK39J60W5,S1VQ(O
- RS stock no.:
- 896-2363
- Mfr. Part No.:
- TK39J60W5,S1VQ(O
- Manufacturer:
- Toshiba
1 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
14 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each
R 77,67
(exc. VAT)
R 89,32
(inc. VAT)
| Units | Per unit |
| 1 - 4 | R 77,67 |
| 5 - 9 | R 75,73 |
| 10 - 24 | R 73,46 |
| 25 - 49 | R 70,52 |
| 50 + | R 67,70 |
- RS stock no.:
- 896-2363
- Mfr. Part No.:
- TK39J60W5,S1VQ(O
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 39 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PN |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 74 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 270 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Length | 15.5mm |
| Typical Gate Charge @ Vgs | 135 nC @ 10 V |
| Width | 4.5mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 20mm |
- RS stock no.:
- 896-2363
- Mfr. Part No.:
- TK39J60W5,S1VQ(O
- Manufacturer:
- Toshiba