Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

RS stock no.:: 891-2743
Mfr. Part No.:: GT40QR21,F(O
Manufacturer:: Toshiba

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

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On back order for despatch 2024/07/03

Not Available for premium delivery

Price (Excl VAT) Each

R 84,39

(exc. VAT)

R 97,05

(inc. VAT)

Units	Per unit
1 +	R 84,39

RS stock no.:: 891-2743
Mfr. Part No.:: GT40QR21,F(O
Manufacturer:: Toshiba

GT40QR21, Silicon N-Channel IGBT
ESD Control Selection Guide V1

RS stock no.:: 891-2743
Mfr. Part No.:: GT40QR21,F(O
Manufacturer:: Toshiba

GT40QR21, Silicon N-Channel IGBT
ESD Control Selection Guide V1

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	230 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	2.5MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Maximum Operating Temperature	175 °C
Gate Capacitance	1500pF
Energy Rating	0.29mJ

Attribute	Value
Maximum Continuous Collector Current	40 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±25V
Maximum Power Dissipation	230 W
Package Type	TO-3P
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	2.5MHz
Transistor Configuration	Single
Dimensions	15.5 x 4.5 x 20mm
Maximum Operating Temperature	175 °C
Gate Capacitance	1500pF
Energy Rating	0.29mJ

Toshiba GT40QR21,F(O IGBT, 40 A 1200 V, 3-Pin TO-3P, Through Hole

IGBT Discretes, Toshiba

IGBT Discretes, Toshiba