N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220SIS Toshiba TK30A06N1,S4X(S
- RS stock no.:
- 891-2951
- Mfr. Part No.:
- TK30A06N1,S4X(S
- Manufacturer:
- Toshiba
30 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
340 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Price (Excl VAT) Each (In a Pack of 10)
R 9,354
(exc. VAT)
R 10,757
(inc. VAT)
| Units | Per unit | Per Pack* |
| 10 - 40 | R 9,354 | R 93,54 |
| 50 - 90 | R 9,12 | R 91,20 |
| 100 - 240 | R 8,846 | R 88,46 |
| 250 - 490 | R 8,492 | R 84,92 |
| 500 + | R 8,152 | R 81,52 |
| *price indicative | ||
- RS stock no.:
- 891-2951
- Mfr. Part No.:
- TK30A06N1,S4X(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 43 A |
| Maximum Drain Source Voltage | 60 V |
| Series | TK |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 25 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 16 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 4.5mm |
| Forward Diode Voltage | 1.2V |
| Height | 15mm |
- RS stock no.:
- 891-2951
- Mfr. Part No.:
- TK30A06N1,S4X(S
- Manufacturer:
- Toshiba