N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
- RS stock no.:
- 891-2866
- Mfr. Part No.:
- TK100A10N1,S4X(S
- Manufacturer:
- Toshiba
6 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
44 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 58,62
(exc. VAT)
R 67,41
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | R 58,62 | R 117,24 |
| 10 - 18 | R 57,155 | R 114,31 |
| 20 - 48 | R 55,44 | R 110,88 |
| 50 - 98 | R 53,22 | R 106,44 |
| 100 + | R 51,09 | R 102,18 |
| *price indicative | ||
- RS stock no.:
- 891-2866
- Mfr. Part No.:
- TK100A10N1,S4X(S
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 207 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 4.5mm |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Height | 15mm |
| Forward Diode Voltage | 1.2V |
| Series | TK |
- RS stock no.:
- 891-2866
- Mfr. Part No.:
- TK100A10N1,S4X(S
- Manufacturer:
- Toshiba