N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
- RS stock no.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Manufacturer:
- Toshiba
148 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 4)
R 53,883
(exc. VAT)
R 61,965
(inc. VAT)
| Units | Per unit | Per Pack* |
| 4 - 16 | R 53,883 | R 215,532 |
| 20 - 36 | R 52,535 | R 210,14 |
| 40 - 96 | R 50,96 | R 203,84 |
| 100 - 196 | R 48,923 | R 195,692 |
| 200 + | R 46,965 | R 187,86 |
| *price indicative | ||
- RS stock no.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Manufacturer:
- Toshiba
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 45 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 140 nC @ 10 V |
| Length | 10mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Width | 4.5mm |
| Number of Elements per Chip | 1 |
| Height | 15mm |
| Series | TK |
- RS stock no.:
- 827-6097
- Mfr. Part No.:
- TK100A06N1,S4X(S
- Manufacturer:
- Toshiba