N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
- RS stock no.:
- 125-0532
- Mfr. Part No.:
- TK10A60W,S4VX(M
- Manufacturer:
- Toshiba
5 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
70 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 5)
R 21,926
(exc. VAT)
R 25,215
(inc. VAT)
| Units | Per unit | Per Pack* |
| 5 - 20 | R 21,926 | R 109,63 |
| 25 - 45 | R 21,378 | R 106,89 |
| 50 - 120 | R 20,736 | R 103,68 |
| 125 - 245 | R 19,906 | R 99,53 |
| 250 + | R 19,11 | R 95,55 |
| *price indicative | ||
- RS stock no.:
- 125-0532
- Mfr. Part No.:
- TK10A60W,S4VX(M
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.7 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220SIS |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 30 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Length | 10mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Width | 4.5mm |
| Number of Elements per Chip | 1 |
| Series | DTMOSIV |
| Height | 15mm |
| Forward Diode Voltage | 1.7V |
- RS stock no.:
- 125-0532
- Mfr. Part No.:
- TK10A60W,S4VX(M
- Manufacturer:
- Toshiba