Toshiba

Discrete Semiconductors

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Discrete Semiconductors
(18) Bipolar Transistors
(1) Darlington Pairs
(11) IGBTs
(6) JFETs
(201) MOSFETs
(14) Schottky Diodes & Rectifiers
(1) Switching Diodes
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Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • R 35.179
    Each (In a Tube of 100)
Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current-15 A
  • Maximum Collector Emitter Voltage-230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • R 53.38Each
  • Also available in industry standard packaging
Toshiba 2SA1943-O(Q) PNP Transistor, -15 A, -230 V, 3-Pin TO-3PL
  • Transistor TypePNP
  • Maximum DC Collector Current-15 A
  • Maximum Collector Emitter Voltage-230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • R 56.112
    Each (In a Pack of 5)
Toshiba 2SC5200-O(S1,F,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PL
  • Transistor TypeNPN
  • Maximum DC Collector Current15 A
  • Maximum Collector Emitter Voltage230 V
  • Package TypeTO-3PL
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 120.41Each
  • Also available in industry standard packaging
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 88.693
    Each (In a Tube of 25)
Toshiba GT50JR22 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
  • R 22.29
    Each (In a Pack of 5)
N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220SIS Toshiba TK10A80E,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current10 A
  • Maximum Drain Source Voltage800 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
Toshiba 2SA1943N(S1,E,S) PNP Transistor, -15 A, -230 V, 3-Pin TO-3P
  • R 43.334
    Each (In a Pack of 5)
Toshiba 2SA1943N(S1,E,S) PNP Transistor, -15 A, -230 V, 3-Pin TO-3P
  • Transistor TypePNP
  • Maximum DC Collector Current-15 A
  • Maximum Collector Emitter Voltage-230 V
  • Package TypeTO-3P
  • Mounting TypeThrough Hole
See similar products in Bipolar Transistors
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • R 34.707
    Each (In a Tube of 50)
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)
  • R 60.505
    Each (In a Pack of 2)
  • Also available in industry standard packaging
N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)
  • Channel TypeN
  • Maximum Continuous Drain Current9 A
  • Maximum Drain Source Voltage900 V
  • Series2SK
  • Package TypeTO-3PN
See similar products in MOSFETs
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • R 54.03
    Each (In a Pack of 2)
N-Channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220SIS Toshiba TK100A10N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current207 A
  • Maximum Drain Source Voltage100 V
  • SeriesTK
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • R 33.362
    Each (In a Pack of 5)
N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current263 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • R 56.293
    Each (In a Pack of 4)
  • Also available in industry standard packaging
N-Channel MOSFET, 100 A, 60 V, 3-Pin TO-220SIS Toshiba TK100A06N1,S4X(S
  • Channel TypeN
  • Maximum Continuous Drain Current100 A
  • Maximum Drain Source Voltage60 V
  • Package TypeTO-220SIS
  • SeriesTK
See similar products in MOSFETs
N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 Toshiba 2SK4013,S5Q(J
  • R 31.00
    Each (In a Pack of 5)
N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 Toshiba 2SK4013,S5Q(J
  • Channel TypeN
  • Maximum Continuous Drain Current6 A
  • Maximum Drain Source Voltage800 V
  • Series2SK
  • Package TypeSC-67
See similar products in MOSFETs
N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
  • R 21.654
    Each (In a Pack of 5)
N-Channel MOSFET, 9.7 A, 600 V, 3-Pin TO-220SIS Toshiba TK10A60W,S4VX(M
  • Channel TypeN
  • Maximum Continuous Drain Current9.7 A
  • Maximum Drain Source Voltage600 V
  • SeriesDTMOSIV
  • Package TypeTO-220SIS
See similar products in MOSFETs
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN Toshiba TK31J60W5,S1VQ(O
  • R 55.80Each
N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-3PN Toshiba TK31J60W5,S1VQ(O
  • Channel TypeN
  • Maximum Continuous Drain Current31 A
  • Maximum Drain Source Voltage600 V
  • Package TypeTO-3PN
  • SeriesTK
See similar products in MOSFETs
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • R 117.79Each
  • Also available in industry standard packaging
Toshiba GT50JR21 IGBT, 50 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current50 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±25V
  • Maximum Power Dissipation230 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • R 7.00
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current1.2 to 3.0mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • R 84.90Each
  • Also available in industry standard packaging
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • R 2.623
    Each (In a Pack of 10)
  • Also available in industry standard packaging
Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)
  • Channel TypeN
  • Idss Drain-Source Cut-off Current0.3 to 0.75mA
  • Maximum Drain Source Voltage10 V
  • Maximum Gate Source Voltage-30 V
  • Maximum Drain Gate Voltage-50V
See similar products in JFETs
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • R 61.846
    Each (In a Tube of 50)
Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
  • Maximum Continuous Collector Current30 A
  • Maximum Collector Emitter Voltage600 V
  • Maximum Gate Emitter Voltage±20V
  • Maximum Power Dissipation170 W
  • Package TypeTO-3P
See similar products in IGBTs
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