Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

RS stock no.:: 165-7183
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

Image representative of range

Price (Excl VAT) Each (On a Reel of 3000)

R 7,132

(exc. VAT)

R 8,202

(inc. VAT)

On back order for despatch 2026/01/02*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Reel**
3000 +	R 7,132	R 21 396,00

**price indicative

RS stock no.:: 165-7183
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

SiA517DJ, N- and P-Channel 12V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 4.5 A
Maximum Drain Source Voltage	12 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	65 mΩ, 170 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	6.5 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	13.1 nC @ 8 V, 9.7 nC @ 8 V
Width	2.15mm
Length	2.15mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.8mm

Dual N/P-Channel-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 Vishay SIA517DJ-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor