Vishay Isolated TrenchFET 2 Type P-Channel Power MOSFET, 1.1 A, 20 V Enhancement, 6-Pin SC-88

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Subtotal (1 reel of 3000 units)*

R 10 920,00

(exc. VAT)

R 12 570,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 3.64R 10,920.00

*price indicative

RS stock no.:
145-2681
Mfr. Part No.:
SI1967DH-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.1A

Maximum Drain Source Voltage Vds

20V

Series

TrenchFET

Package Type

SC-88

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

790mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.25W

Typical Gate Charge Qg @ Vgs

2.6nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Length

2.2mm

Height

1mm

Standards/Approvals

No

Width

1.35 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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