Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

RS stock no.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Image representative of range

Bulk discount available

Price (Excl VAT) Each (In a Pack of 20)

R 11,123

(exc. VAT)

R 12,791

(inc. VAT)

2280 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
20 - 80	R 11,123	R 222,46
100 - 240	R 10,845	R 216,90
260 - 980	R 10,519	R 210,38
1000 - 2480	R 10,098	R 201,96
2500 +	R 9,694	R 193,88

**price indicative

RS stock no.:: 787-9020
Mfr. Part No.:: SI4532CDY-T1-GE3
Manufacturer:: Vishay

Si4532CDY, N- and P-Channel 30V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.3 A, 6 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	65 mΩ, 140 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.78 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	6 nC @ 10 V, 7.8 nC @ 10 V
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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