MPN

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

RS stock no.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 166,66

(exc. VAT)

R 191,66

(inc. VAT)

FREE delivery for orders over R 1,500.00

Last RS stock

Final 1,560 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
20 - 80	R 8.333	R 166.66
100 - 240	R 8.125	R 162.50
260 - 980	R 7.881	R 157.62
1000 - 2980	R 7.566	R 151.32
3000 +	R 7.264	R 145.28

*price indicative

RS stock no.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-89-6
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	250mW
	Typical Gate Charge Qg @ Vgs	750nC
	Maximum Gate Source Voltage Vgs	±20 V
	Forward Voltage Vf	1.4V
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Width	1.7 mm
	Standards/Approvals	No
	Length	1.7mm
	Height	0.6mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-89-6
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 250mW
	Typical Gate Charge Qg @ Vgs 750nC
	Maximum Gate Source Voltage Vgs ±20 V
	Forward Voltage Vf 1.4V
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Width 1.7 mm
	Standards/Approvals No
	Length 1.7mm
	Height 0.6mm
	Number of Elements per Chip 2
	Automotive Standard No

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

FREE delivery for orders over R 1,500.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Related links