Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

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Subtotal (1 pack of 20 units)*

R 169,20

(exc. VAT)

R 194,60

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 80R 8.46R 169.20
100 - 240R 8.248R 164.96
260 - 980R 8.001R 160.02
1000 - 2980R 7.681R 153.62
3000 +R 7.374R 147.48

*price indicative

Packaging Options:
RS stock no.:
787-9055
Mfr. Part No.:
SI1029X-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

300mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-89-6

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250mW

Typical Gate Charge Qg @ Vgs

750nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.4V

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Length

1.7mm

Width

1.7 mm

Height

0.6mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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