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Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

RS stock no.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

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Bulk discount available

Subtotal (1 pack of 20 units)*

R 173,96

(exc. VAT)

R 200,06

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

1,560 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 80	R 8.698	R 173.96
100 - 240	R 8.48	R 169.60
260 - 980	R 8.226	R 164.52
1000 - 2980	R 7.897	R 157.94
3000 +	R 7.581	R 151.62

*price indicative

RS stock no.:: 787-9055
Mfr. Part No.:: SI1029X-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	300mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SC-89-6
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	8Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	750nC
	Maximum Power Dissipation Pd	250mW
	Forward Voltage Vf	1.4V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	1.7 mm
	Length	1.7mm
	Standards/Approvals	No
	Height	0.6mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 300mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SC-89-6
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 8Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 750nC
	Maximum Power Dissipation Pd 250mW
	Forward Voltage Vf 1.4V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 1.7 mm
	Length 1.7mm
	Standards/Approvals No
	Height 0.6mm
	Number of Elements per Chip 2
	Automotive Standard No

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 300 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1029X-T1-GE3

FREE delivery for orders over R 1,500.00

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