Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

R 14 610,00

(exc. VAT)

R 16 802,50

(inc. VAT)

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  • 15,000 unit(s) ready to ship from another location
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Units
Per unit
Per Reel*
2500 +R 5.844R 14,610.00

*price indicative

RS stock no.:
165-6942
Mfr. Part No.:
SI4554DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3.2W

Typical Gate Charge Qg @ Vgs

13.3nC

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Width

4 mm

Standards/Approvals

No

Height

1.5mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


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