Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 700 mA, 20 V Enhancement, 6-Pin SC-88 SI1553CDL-T1-GE3
- RS stock no.:
- 812-3094
- Mfr. Part No.:
- SI1553CDL-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 109,80
(exc. VAT)
R 126,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 580 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 280 | R 5.49 | R 109.80 |
| 300 - 580 | R 5.353 | R 107.06 |
| 600 - 1480 | R 5.192 | R 103.84 |
| 1500 - 2980 | R 4.985 | R 99.70 |
| 3000 + | R 4.785 | R 95.70 |
*price indicative
- RS stock no.:
- 812-3094
- Mfr. Part No.:
- SI1553CDL-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 700mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.48mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.2nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 340mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Length | 2.2mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 700mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.48mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.2nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 340mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Length 2.2mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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