MPN

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

RS stock no.:: 710-3345
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 203,11

(exc. VAT)

R 233,575

(inc. VAT)

FREE delivery for orders over R 1,500.00

Being discontinued

5 left, ready to ship from another location
Final 3,875 unit(s) shipping from 02 January 2026

Units	Per unit	Per Pack*
5 - 20	R 40.622	R 203.11
25 - 95	R 39.606	R 198.03
100 - 245	R 38.418	R 192.09
250 - 495	R 36.882	R 184.41
500 +	R 35.406	R 177.03

*price indicative

RS stock no.:: 710-3345
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	72mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	3.4W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1.5mm
	Standards/Approvals	No
	Length	5mm
	Width	4 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 72mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 3.4W
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1.5mm
	Standards/Approvals No
	Length 5mm
	Width 4 mm
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC SI4559ADY-T1-GE3

FREE delivery for orders over R 1,500.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Related links