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Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

RS stock no.:: 814-1225
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

Image representative of range

Bulk discount available

Subtotal (1 pack of 20 units)*

R 203,52

(exc. VAT)

R 234,04

(inc. VAT)

FREE delivery for orders over R 1,500.00

Temporarily out of stock

Shipping from 20 April 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 280	R 10.176	R 203.52
300 - 580	R 9.921	R 198.42
600 - 1480	R 9.624	R 192.48
1500 - 2980	R 9.239	R 184.78
3000 +	R 8.869	R 177.38

*price indicative

RS stock no.:: 814-1225
Mfr. Part No.:: SIA517DJ-T1-GE3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	4.5A
	Maximum Drain Source Voltage Vds	12V
	Series	TrenchFET
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	6.5W
	Typical Gate Charge Qg @ Vgs	9.7nC
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	150°C
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Height	0.8mm
	Length	2.15mm
	Width	2.15 mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 4.5A
	Maximum Drain Source Voltage Vds 12V
	Series TrenchFET
	Package Type SC-70
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 6.5W
	Typical Gate Charge Qg @ Vgs 9.7nC
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature 150°C
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Height 0.8mm
	Length 2.15mm
	Width 2.15 mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type P, Type N-Channel Power MOSFET, 4.5 A, 12 V Enhancement, 6-Pin SC-70 SIA517DJ-T1-GE3

FREE delivery for orders over R 1,500.00

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