N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK Infineon IRFS4010TRLPBF

RS stock no.:: 130-0999
Mfr. Part No.:: IRFS4010TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK Infineon IRFS4010TRLPBF

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Subtotal (1 pack of 2 units)**

R 138 42

(exc. VAT)

R 159 18

(inc. VAT)

46 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

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Units	Per unit	Per Pack**
2 - 8	R 69,21	R 138,42
10 - 98	R 67,48	R 134,96
100 - 498	R 65,455	R 130,91
500 - 998	R 62,835	R 125,67
1000 +	R 60,32	R 120,64

**price indicative

RS stock no.:: 130-0999
Mfr. Part No.:: IRFS4010TRLPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFS4010TRLPBF

This high-power MOSFET delivers strong performance across various applications, essential for contemporary electronic systems. Its enhancement mode operation and advanced HEXFET technology provide efficient power management, making it suitable for applications that require dependable power control.

Features & Benefits

• Supports continuous drain current up to 180A for substantial loads
• Maximum drain-source voltage rated at 100V for flexibility
• Low Rds(on) of 4.7mΩ minimises power loss during operation
• Designed in a single configuration for easier integration
• Handles temperatures up to +175°C effectively
• Capable of high-speed power switching for efficient operations

Applications

• Used in synchronous rectification for switched-mode power supplies
• Suitable for uninterruptible power supply systems
• Applied in hard-switched and high-frequency circuits
• Utilised in automation equipment that needs efficient power management
• Integrates well into diverse electrical and mechanical projects

How does the resistance affect performance in high-frequency applications?

A low Rds(on) notably reduces heat generation and power loss, enhancing the efficiency of high-frequency power converters.

What gate voltage is required to ensure optimal operation?

The device operates effectively with a gate-source voltage between 2V and 4V, with 10V recommended for maximum efficiency.

Is installation straightforward for this component?

Yes, this surface mount MOSFET is designed for easy placement on PCBs, allowing for quick and reliable setups in various devices.

Can it handle thermal management effectively?

With a maximum operating junction temperature of +175°C, it is suitable for use in environments that require solid thermal performance.

What types of circuits can benefit from incorporating this component?

It is ideal for high-speed switching applications, load driver circuits, and power management systems in automation and electrical fields.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	375 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	143 nC @ 10 V
Length	10.67mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm
Forward Diode Voltage	1.3V