Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

R 141,69

(exc. VAT)

R 162,944

(inc. VAT)

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  • Plus 494 unit(s) shipping from 05 January 2026
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Units
Per unit
Per Pack*
2 - 8R 70.845R 141.69
10 - 18R 69.075R 138.15
20 - 38R 67.005R 134.01
40 - 98R 64.325R 128.65
100 +R 61.75R 123.50

*price indicative

RS stock no.:
688-7216
Mfr. Part No.:
IRLB4030PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

370W

Typical Gate Charge Qg @ Vgs

87nC

Maximum Operating Temperature

175°C

Height

9.02mm

Standards/Approvals

No

Width

4.83 mm

Length

10.67mm

Distrelec Product Id

304-35-447

Automotive Standard

No

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