Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247 IRFP4110PBF

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Subtotal (1 pack of 2 units)*

R 183,00

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R 210,44

(inc. VAT)

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  • 32 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 91.50R 183.00
10 - 18R 89.215R 178.43
20 - 38R 86.54R 173.08
40 - 98R 83.08R 166.16
100 +R 79.755R 159.51

*price indicative

Packaging Options:
RS stock no.:
688-6995
Mfr. Part No.:
IRFP4110PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

370W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

20.7mm

Width

5.31 mm

Standards/Approvals

No

Length

15.87mm

Automotive Standard

No

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