Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220 IRLB4030PBF

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Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 329,85

(exc. VAT)

R 1 529,35

(inc. VAT)

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Units
Per unit
Per Tube*
50 - 50R 26.597R 1,329.85
100 - 200R 25.932R 1,296.60
250 - 450R 25.154R 1,257.70
500 - 950R 24.147R 1,207.35
1000 +R 23.182R 1,159.10

*price indicative

RS stock no.:
124-9026
Mfr. Part No.:
IRLB4030PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

87nC

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

370W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

9.02mm

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Automotive Standard

No

COO (Country of Origin):
MX

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