Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220AB

Image representative of range

View all MOSFETs

Subtotal (1 tube of 50 units)*

R 2 825,70

(exc. VAT)

R 3 249,55

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 150 unit(s), ready to ship from another location
Units
Per unit
Per Tube*
50 +R 56.514R 2,825.70

*price indicative

RS stock no.:
145-9698
Mfr. Part No.:
IRFB4110GPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220AB

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

370W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

16.51mm

Automotive Standard

No

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links