Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 25 units)*

R 1 565,275

(exc. VAT)

R 1 800,075

(inc. VAT)

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In Stock
  • 25 unit(s) ready to ship from another location
  • Plus 400 unit(s) shipping from 19 March 2026
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Units
Per unit
Per Tube*
25 - 25R 62.611R 1,565.28
50 - 100R 61.046R 1,526.15
125 - 225R 59.214R 1,480.35
250 - 475R 56.846R 1,421.15
500 +R 54.572R 1,364.30

*price indicative

RS stock no.:
124-9014
Mfr. Part No.:
IRFP4110PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

150nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

370W

Maximum Operating Temperature

175°C

Width

5.31 mm

Height

20.7mm

Standards/Approvals

No

Length

15.87mm

Automotive Standard

No

COO (Country of Origin):
MX

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