Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

RS stock no.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB IRFB4110PBF

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Subtotal (1 unit)**

R 40,38

(exc. VAT)

R 46,44

(inc. VAT)

97 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

234 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

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Units	Per unit
1 - 9	R 40,38
10 - 49	R 39,37
50 - 99	R 38,19
100 - 249	R 36,66
250 +	R 35,19

**price indicative

RS stock no.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

Motor Control MOSFET

Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET

A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF

This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits

• Maximum continuous drain current of 180A supports high performance
• Drain-to-source voltage range of 100V allows for a variety of applications
• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency
• Power dissipation capability of up to 370W ensures stability
• Improved thermal characteristics foster reliability in extreme conditions
• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications

• Employed in high-efficiency synchronous rectification for power supplies
• Suitable for uninterruptible power supply systems
• Ideal for high-speed power switching circuits
• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?

It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?

The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?

Yes, its design facilitates high-speed switching, making it appropriate for applications requiring rapid on-off transitions.

What are the thermal resistance values for proper mounting?

The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.5 mO
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Length	10.66mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	150 nC @ 10 V
Width	4.82mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	9.02mm
Forward Diode Voltage	1.3V