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    N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

    RS stock no.:
    495-578
    Mfr. Part No.:
    IRFB4110PBF
    Manufacturer:
    Infineon
    Infineon
    View all MOSFETs
    653 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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    Price (Excl VAT) Each

    R 91.77

    (exc. VAT)

    R 105.54

    (inc. VAT)

    unitsPer unit
    1 - 9R 91.77
    10 - 49R 89.48
    50 - 99R 86.80
    100 - 249R 83.33
    250 +R 80.00
    RS stock no.:
    495-578
    Mfr. Part No.:
    IRFB4110PBF
    Manufacturer:
    Infineon

    Legislation and Compliance


    Product Details

    Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


    Motor Control MOSFET


    Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

    Synchronous Rectifier MOSFET


    A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.


    MOSFET Transistors, Infineon


    Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

    Specification

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current180 A
    Maximum Drain Source Voltage100 V
    Package TypeTO-220AB
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance5 mΩ
    Channel ModeEnhancement
    Maximum Gate Threshold Voltage4V
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation370 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Transistor MaterialSi
    Width4.82mm
    Typical Gate Charge @ Vgs150 nC @ 10 V
    Number of Elements per Chip1
    Length10.66mm
    Maximum Operating Temperature+175 °C
    Minimum Operating Temperature-55 °C
    SeriesHEXFET
    Height9.02mm
    653 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
    Add to Basket
    units

    Not Available for premium delivery

    Added

    Price (Excl VAT) Each

    R 91.77

    (exc. VAT)

    R 105.54

    (inc. VAT)

    unitsPer unit
    1 - 9R 91.77
    10 - 49R 89.48
    50 - 99R 86.80
    100 - 249R 83.33
    250 +R 80.00