N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

RS stock no.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

40 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

57 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Price (Excl VAT) Each

R 38,02

(exc. VAT)

R 43,72

(inc. VAT)

Units	Per unit
1 - 9	R 38,02
10 - 49	R 37,07
50 - 99	R 35,96
100 - 249	R 34,52
250 +	R 33,14

RS stock no.:: 495-578
Mfr. Part No.:: IRFB4110PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.66mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Width	4.82mm
Height	9.02mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110PBF

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