N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110GPBF

RS stock no.:: 865-5807
Mfr. Part No.:: IRFB4110GPBF
Manufacturer:: Infineon

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110GPBF

Image representative of range

2 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

4 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Price (Excl VAT) Each (In a Tube of 2)

R 73,885

(exc. VAT)

R 84,968

(inc. VAT)

Units	Per unit	Per Tube*
2 +	R 73,885	R 147,77

*price indicative

RS stock no.:: 865-5807
Mfr. Part No.:: IRFB4110GPBF
Manufacturer:: Infineon

IRFB4110GPbF, HEXFET Power MOSFET
Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	180 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	370 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	150 nC @ 10 V
Width	4.83mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.67mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	16.51mm

N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220AB Infineon IRFB4110GPBF

N-Channel Power MOSFET 100V, Infineon