Vishay Isolated TrenchFET 2 Type P, Type P-Channel MOSFET, 135 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1025X-T1-GE3

Image representative of range

Unavailable
RS will no longer stock this product.
Packaging Options:
RS stock no.:
812-3029
Mfr. Part No.:
SI1025X-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type P

Maximum Continuous Drain Current Id

135mA

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SC-89-6

Mount Type

Surface, Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.7nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

250mW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.4V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

1.7mm

Width

1.2 mm

Standards/Approvals

No

Height

0.6mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
PH

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links