Vishay Isolated TrenchFET 2 Type P, Type P-Channel MOSFET, 135 mA, 60 V Enhancement, 6-Pin SC-89-6 SI1025X-T1-GE3

Image representative of range

Stock information currently inaccessible
Packaging Options:
RS stock no.:
812-3029
Mfr. Part No.:
SI1025X-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P, Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

135mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-89-6

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.4V

Maximum Power Dissipation Pd

250mW

Typical Gate Charge Qg @ Vgs

1.7nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

1.7mm

Width

1.2mm

Standards/Approvals

No

Height

0.6mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
PH

Dual P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy