Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 6 A, 30 V Enhancement, 8-Pin SOIC

Image representative of range

Subtotal (1 reel of 2500 units)*

R 11 572,50

(exc. VAT)

R 13 307,50

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2500 +R 4.629R 11,572.50

*price indicative

RS stock no.:
165-7226
Mfr. Part No.:
SI4532CDY-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.78W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Recently viewed