Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4554DY-T1-GE3

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Subtotal (1 pack of 10 units)*

R 102,12

(exc. VAT)

R 117,44

(inc. VAT)

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  • 15,300 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40R 10.212R 102.12
50 - 240R 9.957R 99.57
250 - 990R 9.658R 96.58
1000 - 2490R 9.272R 92.72
2500 +R 8.901R 89.01

*price indicative

Packaging Options:
RS stock no.:
787-9238
Mfr. Part No.:
SI4554DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

40V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

34mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

150°C

Typical Gate Charge Qg @ Vgs

13.3nC

Maximum Power Dissipation Pd

3.2W

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Height

1.5mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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