Vishay Isolated TrenchFET 2 Type N, Type P-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4564DY-T1-GE3
- RS stock no.:
- 812-3230
- Mfr. Part No.:
- SI4564DY-T1-GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 186,21
(exc. VAT)
R 214,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 33,050 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 18.621 | R 186.21 |
| 100 - 490 | R 18.155 | R 181.55 |
| 500 - 1490 | R 17.61 | R 176.10 |
| 1500 - 2490 | R 16.906 | R 169.06 |
| 2500 + | R 16.23 | R 162.30 |
*price indicative
- RS stock no.:
- 812-3230
- Mfr. Part No.:
- SI4564DY-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Power Dissipation Pd | 3.2W | |
| Minimum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.55mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Power Dissipation Pd 3.2W | ||
Minimum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.55mm | ||
Width 4 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Vishay Semiconductor
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