Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

R 22 725,00

(exc. VAT)

R 26 125,00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 - 2500R 9.09R 22,725.00
5000 - 5000R 8.862R 22,155.00
7500 - 12500R 8.597R 21,492.50
15000 - 20000R 8.253R 20,632.50
22500 +R 7.923R 19,807.50

*price indicative

RS stock no.:
919-0297
Mfr. Part No.:
SI4559ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.4W

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.5mm

Length

5mm

Width

4 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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