Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

RS stock no.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Bulk discount available

Price (Excl VAT) Each (On a Reel of 2500)

R 15,205

(exc. VAT)

R 17,486

(inc. VAT)

4530 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Reel**
2500 - 2500	R 15,205	R 38 012,50
5000 - 5000	R 14,825	R 37 062,50
7500 - 12500	R 14,38	R 35 950,00
15000 - 20000	R 13,805	R 34 512,50
22500 +	R 13,253	R 33 132,50

**price indicative

RS stock no.:: 919-0297
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W, 3.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	2
Length	5mm
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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