Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC

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Subtotal (1 reel of 2500 units)*

R 23 485,00

(exc. VAT)

R 27 007,50

(inc. VAT)

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Last RS stock
  • Final 2,500 unit(s), ready to ship from another location
Units
Per unit
Per Reel*
2500 - 2500R 9.394R 23,485.00
5000 - 5000R 9.16R 22,900.00
7500 - 12500R 8.885R 22,212.50
15000 - 20000R 8.529R 21,322.50
22500 +R 8.188R 20,470.00

*price indicative

RS stock no.:
919-4198
Mfr. Part No.:
SI4948BEY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

2.4W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.5nC

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Height

1.5mm

Standards/Approvals

No

Width

4 mm

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
TW

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