MPN

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3

RS stock no.:: 180-8097
Mfr. Part No.:: SI4559ADY-T1-E3
Manufacturer:: Vishay

Vishay Dual TrenchFET 2 Type P, Type N-Channel MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8 SI4559ADY-T1-E3

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Subtotal (1 pack of 5 units)*

R 211,71

(exc. VAT)

R 243,46

(inc. VAT)

FREE delivery for orders over R 1,500.00

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1,495 left, ready to ship from another location

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Units	Per unit	Per Pack*
5 - 45	R 42.342	R 211.71
50 - 95	R 41.284	R 206.42
100 - 495	R 40.046	R 200.23
500 - 995	R 38.444	R 192.22
1000 +	R 36.906	R 184.53

*price indicative

RS stock no.:: 180-8097
Mfr. Part No.:: SI4559ADY-T1-E3
Manufacturer:: Vishay

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P, Type N
	Maximum Continuous Drain Current Id	5.3A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.58Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	3.4W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Length	5mm
	Height	1.75mm
	Width	4mm
	Standards/Approvals	IEC 61249-2-21
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P, Type N
	Maximum Continuous Drain Current Id 5.3A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.58Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 3.4W
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Length 5mm
	Height 1.75mm
	Width 4mm
	Standards/Approvals IEC 61249-2-21
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount dual channel (both P and N-channels) MOSFET is a new age product with a drain-source resistance of 58mohm at a gate-source voltage of 10V. It has a drain-source voltage of 60V. It has continuous drain currents of 5.3A and 3.9A. It has a maximum power rating of 3.4W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality. It is applicable in CCFL inverters.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested

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