Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS stock no.:: 787-8995
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Bulk discount available

Price (Excl VAT) Each (In a Pack of 10)

R 15,827

(exc. VAT)

R 18,201

(inc. VAT)

60 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

Not Available for premium delivery

Units	Per unit	Per Pack**
10 - 40	R 15,827	R 158,27
50 - 240	R 15,431	R 154,31
250 - 990	R 14,968	R 149,68
1000 - 2490	R 14,369	R 143,69
2500 +	R 13,794	R 137,94

**price indicative

RS stock no.:: 787-8995
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Si9945BDY, Dual N-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	4mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Minimum Operating Temperature	-55 °C
Height	1.5mm

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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