Infineon OptiMOS Type P-Channel MOSFET, 6.5 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS stock no.:
- 273-3006
- Mfr. Part No.:
- IPD25DP06NMATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 132,04
(exc. VAT)
R 151,85
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,290 unit(s) shipping from 15 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 13.204 | R 132.04 |
| 50 - 90 | R 12.874 | R 128.74 |
| 100 - 240 | R 12.488 | R 124.88 |
| 250 - 990 | R 11.988 | R 119.88 |
| 1000 + | R 11.508 | R 115.08 |
*price indicative
- RS stock no.:
- 273-3006
- Mfr. Part No.:
- IPD25DP06NMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 28W | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 28W | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suit
Easy interface to MCU
Improved efficiency at low loads due to low Qg
Fast switching
Related links
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