Infineon SPD04P10PL G Type P-Channel MOSFET, -4.2 A, 100 V Enhancement, 3-Pin PG-TO252-3
- RS stock no.:
- 273-7551
- Mfr. Part No.:
- SPD04P10PLGBTMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 132,63
(exc. VAT)
R 152,52
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 13.263 | R 132.63 |
| 50 - 90 | R 12.931 | R 129.31 |
| 100 - 240 | R 12.543 | R 125.43 |
| 250 - 990 | R 12.041 | R 120.41 |
| 1000 + | R 11.559 | R 115.59 |
*price indicative
- RS stock no.:
- 273-7551
- Mfr. Part No.:
- SPD04P10PLGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -4.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SPD04P10PL G | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 0.94V | |
| Maximum Power Dissipation Pd | 38W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Length | 40mm | |
| Standards/Approvals | AEC Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -4.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SPD04P10PL G | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 0.94V | ||
Maximum Power Dissipation Pd 38W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 40 mm | ||
Height 1.5mm | ||
Length 40mm | ||
Standards/Approvals AEC Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It is a qualified according to AEC Q101.
Logic level
RoHS compliant
Enhancement mode
Pb free lead plating
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