Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS stock no.:
- 273-3012
- Mfr. Part No.:
- IPD900P06NMATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 10 units)*
R 163,35
(exc. VAT)
R 187,85
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,420 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 16.335 | R 163.35 |
| 50 - 90 | R 15.927 | R 159.27 |
| 100 - 240 | R 15.449 | R 154.49 |
| 250 - 990 | R 14.831 | R 148.31 |
| 1000 + | R 14.238 | R 142.38 |
*price indicative
- RS stock no.:
- 273-3012
- Mfr. Part No.:
- IPD900P06NMATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -16.4A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | -27nC | |
| Maximum Power Dissipation Pd | 63W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -16.4A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs -27nC | ||
Maximum Power Dissipation Pd 63W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in mediu
Easy interface to MCU
Fast switching
Avalanche ruggedness
Related links
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