Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 199,17

(exc. VAT)

R 229,045

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 4,805 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5R 39.834R 199.17
10 - 95R 38.838R 194.19
100 - 245R 37.672R 188.36
250 - 495R 36.166R 180.83
500 +R 34.72R 173.60

*price indicative

Packaging Options:
RS stock no.:
220-7416
Mfr. Part No.:
IPD90P03P4L04ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

125nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

137W

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.73mm

Width

6.22 mm

Height

2.41mm

Automotive Standard

AEC-Q101

The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.

P-channel - Logic Level - Enhancement mode

No charge pump required for high side drive.

Simple interface drive circuit

World's lowest RDSon at 40V

Highest current capability

Lowest switching and conduction power losses for highest thermal efficiency

Related links