Infineon OptiMOS Type P-Channel MOSFET & Diode, 70 A, 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2
- RS stock no.:
- 220-7412
- Mfr. Part No.:
- IPD70P04P4L08ATMA2
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 10 units)*
R 171,98
(exc. VAT)
R 197,78
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,080 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | R 17.198 | R 171.98 |
| 20 - 90 | R 16.768 | R 167.68 |
| 100 - 240 | R 16.265 | R 162.65 |
| 250 - 490 | R 15.614 | R 156.14 |
| 500 + | R 14.989 | R 149.89 |
*price indicative
- RS stock no.:
- 220-7412
- Mfr. Part No.:
- IPD70P04P4L08ATMA2
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 75W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 75W | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Related links
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