Infineon OptiMOS Type P-Channel MOSFET, 14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8
- RS stock no.:
- 273-5244
- Mfr. Part No.:
- BSO301SPHXUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 139,39
(exc. VAT)
R 160,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 75 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 27.878 | R 139.39 |
| 50 - 95 | R 27.182 | R 135.91 |
| 100 - 245 | R 26.366 | R 131.83 |
| 250 - 995 | R 25.312 | R 126.56 |
| 1000 + | R 24.30 | R 121.50 |
*price indicative
- RS stock no.:
- 273-5244
- Mfr. Part No.:
- BSO301SPHXUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 14.9A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PG-DSO-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 136nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40 mm | |
| Standards/Approvals | JEDEC, RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 14.9A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PG-DSO-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 136nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40 mm | ||
Standards/Approvals JEDEC, RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.
Logic level
Halogen free
RoHS compliant
Avalanche rated
Pb free lead plating
Enhancement mode
Related links
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO301SPHXUMA1
- Infineon P-Channel MOSFET 30 V, 8-Pin PG-DSO-8 BSO080P03SHXUMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170230C04LMDSXTMA1
- Infineon ISA Dual N/P-Channel-Channel MOSFET 30 V, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA
- Infineon ISA Dual N/P-Channel-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA250300C04LMDSXTMA1
- Infineon ISA Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1
- Infineon ISA Dual Dual N-Channel MOSFET 40 V, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1
- Vishay TrenchFET P-Channel MOSFET 30 V, 8-Pin SO-8 SI4825DDY-T1-GE3