Infineon SPD18P06P G Type P-Channel MOSFET, -18.6 A, 60 V Enhancement, 3-Pin PG-TO252-3
- RS stock no.:
- 273-2832
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 5 units)*
R 115,20
(exc. VAT)
R 132,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 50 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 23.04 | R 115.20 |
| 50 - 95 | R 22.464 | R 112.32 |
| 100 - 245 | R 21.79 | R 108.95 |
| 250 + | R 20.918 | R 104.59 |
*price indicative
- RS stock no.:
- 273-2832
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -18.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TO252-3 | |
| Series | SPD18P06P G | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.33V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 80W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Standards/Approvals | IEC 68-1, RoHS, AEC Q101 | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -18.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TO252-3 | ||
Series SPD18P06P G | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.33V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 80W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Standards/Approvals IEC 68-1, RoHS, AEC Q101 | ||
Width 40 mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a P channel, enhancement mode MOSFET. It has 175 degree Celsius operating temperature. This MOSFET is qualified according to AEC Q101 standard.
RoHS compliant
Avalanche rated
Pb free lead plating
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