Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1

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Subtotal (1 pack of 2 units)*

R 77,94

(exc. VAT)

R 89,64

(inc. VAT)

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  • 350 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 38.97R 77.94
10 - 98R 37.995R 75.99
100 - 248R 36.855R 73.71
250 - 498R 35.38R 70.76
500 +R 33.965R 67.93

*price indicative

Packaging Options:
RS stock no.:
240-6638
Mfr. Part No.:
IQE050N08NM5CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 80V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

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