Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1
- RS stock no.:
- 240-6638
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS stock no.:
- 240-6638
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 730mV | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 730mV | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 80V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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