Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
- RS stock no.:
- 240-6640
- Mfr. Part No.:
- IQE065N10NM5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
R 84,74
(exc. VAT)
R 97,46
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 396 unit(s) shipping from 13 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 42.37 | R 84.74 |
| 10 - 98 | R 41.31 | R 82.62 |
| 100 - 248 | R 40.07 | R 80.14 |
| 250 - 498 | R 38.465 | R 76.93 |
| 500 + | R 36.925 | R 73.85 |
*price indicative
- RS stock no.:
- 240-6640
- Mfr. Part No.:
- IQE065N10NM5ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 0.73V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 0.73V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 100V PQFN 3.3x3.3 Source-Down features 100 V and low RDS(on) of 6.5 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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