Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE008N03LM5CGATMA1

Image representative of range

Bulk discount available
View bulk pricing option

Subtotal (1 pack of 2 units)*

R 76,12

(exc. VAT)

R 87,54

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 460 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 8R 38.06R 76.12
10 - 98R 37.11R 74.22
100 - 248R 35.995R 71.99
250 - 498R 34.555R 69.11
500 +R 33.175R 66.35

*price indicative

Packaging Options:
RS stock no.:
240-6629
Mfr. Part No.:
IQE008N03LM5CGATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Forward Voltage Vf

0.73V

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 30V PQFN 3.3x3.3 Source-Down features 30 V and low RDS(on) of 0.85 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy