Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE030N06NM5CGATMA1

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Subtotal (1 pack of 2 units)*

R 94,50

(exc. VAT)

R 108,68

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 47.25R 94.50
10 - 98R 46.07R 92.14
100 - 248R 44.69R 89.38
250 - 498R 42.90R 85.80
500 +R 41.185R 82.37

*price indicative

Packaging Options:
RS stock no.:
240-6634
Mfr. Part No.:
IQE030N06NM5CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

IQE

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.85mΩ

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOSTM 5 60V PQFN 3.3x3.3 Source-Down features 60 V and low RDS(on) of 3.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.

Improved PCB losses

Enabling highest power density and performance

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