Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE065N10NM5CGATMA1
- RS stock no.:
- 240-6642
- Mfr. Part No.:
- IQE065N10NM5CGATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 84,67
(exc. VAT)
R 97,37
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 42.335 | R 84.67 |
| 10 - 98 | R 41.275 | R 82.55 |
| 100 - 248 | R 40.035 | R 80.07 |
| 250 - 498 | R 38.435 | R 76.87 |
| 500 + | R 36.90 | R 73.80 |
*price indicative
- RS stock no.:
- 240-6642
- Mfr. Part No.:
- IQE065N10NM5CGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 0.73V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 0.73V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 100V PQFN 3.3x3.3 Source-Down features 100 V and low RDS(on) of 6.5 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
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