Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1

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Subtotal (1 pack of 2 units)*

R 101,25

(exc. VAT)

R 116,438

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 50.625R 101.25
10 - 98R 49.36R 98.72
100 - 248R 47.88R 95.76
250 - 498R 45.965R 91.93
500 +R 44.125R 88.25

*price indicative

Packaging Options:
RS stock no.:
242-0307
Mfr. Part No.:
IQE006NE2LM5CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

0.73V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has Pb-free lead plating and is RoHS compliant. It is 100% avalanche tested.

Halogen-free according to IEC61249-2-21

Fully qualified according to JEDEC for Industrial Applications

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