Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1
- RS stock no.:
- 242-0307
- Mfr. Part No.:
- IQE006NE2LM5CGATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 79,47
(exc. VAT)
R 91,39
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,402 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 39.735 | R 79.47 |
| 10 - 98 | R 38.74 | R 77.48 |
| 100 - 248 | R 37.58 | R 75.16 |
| 250 - 498 | R 36.075 | R 72.15 |
| 500 + | R 34.63 | R 69.26 |
*price indicative
- RS stock no.:
- 242-0307
- Mfr. Part No.:
- IQE006NE2LM5CGATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | IQE | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.73V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series IQE | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.73V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has Pb-free lead plating and is RoHS compliant. It is 100% avalanche tested.
Halogen-free according to IEC61249-2-21
Fully qualified according to JEDEC for Industrial Applications
Related links
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE008N03LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE050N08NM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE030N06NM5CGATMA1