Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1

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Subtotal (1 pack of 2 units)*

R 88,46

(exc. VAT)

R 101,72

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 44.23R 88.46
10 - 98R 43.125R 86.25
100 - 248R 41.83R 83.66
250 - 498R 40.155R 80.31
500 +R 38.55R 77.10

*price indicative

Packaging Options:
RS stock no.:
242-0305
Mfr. Part No.:
IQE006NE2LM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

0.73V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.

100% avalanche tested

Superior thermal resistance

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