Vishay TrenchFET Gen IV Type N-Channel MOSFET, 11 A, 45 V Enhancement, 4-Pin SO-8 SIJ150DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 27 615,00

(exc. VAT)

R 31 758,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 9.205R 27,615.00

*price indicative

RS stock no.:
200-6841
Mfr. Part No.:
SIJ150DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

45V

Series

TrenchFET Gen IV

Package Type

SO-8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

3.4mm

Height

3.4mm

Standards/Approvals

No

Width

0.98 mm

Automotive Standard

No

The Vishay SIJ150DP-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low Qg and Qoss reduce power loss and improve efficiency

Flexible leads provide resilience to mechanical stress

100 % Rg and UIS tested

Qgd/Qgs ratio < 1 optimizes switching characteristics

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