Vishay TrenchFET Gen IV N-Channel MOSFET, 92.5 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SiSS22LDN-T1-GE3

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RS stock no.:
200-6854
Mfr. Part No.:
SiSS22LDN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

92.5A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET Gen IV

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

56nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

No

Width

3.3mm

Height

3.3mm

Automotive Standard

No

The Vishay SiSS22LDN-T1-GE3 is a N-channel 60V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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