Vishay TrenchFET Gen IV Type N-Channel MOSFET, 108 A, 45 V Enhancement, 8-Pin PowerPAK 1212 SISS50DN-T1-GE3

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Subtotal (1 reel of 3000 units)*

R 21 720,00

(exc. VAT)

R 24 990,00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +R 7.24R 21,720.00

*price indicative

RS stock no.:
200-6846
Mfr. Part No.:
SISS50DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

108A

Maximum Drain Source Voltage Vds

45V

Package Type

PowerPAK 1212

Series

TrenchFET Gen IV

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

65.7W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

3.3mm

Length

3.3mm

Automotive Standard

No

The Vishay SISS50DN-T1-GE3 is a N-channel 45V (D-S) MOSFET.

TrenchFET Gen IV power MOSFET

Very low RDS(on) in a compact and thermally enhanced package

Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

100 % Rg and UIS tested

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